Engineering a topological phase transition in β-InSe via strain
نویسندگان
چکیده
منابع مشابه
Strain-induced topological insulator phase transition in HgSe
Lars Winterfeld,1,2 Luis A. Agapito,1 Jin Li,1 Nicholas Kioussis,1,* Peter Blaha,3 and Yong P. Chen4 1Department of Physics, California State University, Northridge, California 91330-8268, USA 2Institut für Physik, University of Technology Ilmenau, 98684 Ilmenau, Germany 3Institute for Materials Chemistry, TU Vienna, A-1060 Vienna, Austria 4Department of Physics, Purdue University, West Lafayet...
متن کاملAlloy Engineering of Topological Semimetal Phase Transition in MgTa2−xNbxN3
Dirac, triple-point, andWeyl fermions represent three topological semimetal phases, characterized with a descending degree of band degeneracy, which have been realized separately in specific crystalline materials with different lattice symmetries. Here we demonstrate an alloy engineering approach to realize all three types of fermions in one single material system of MgTa2−xNbxN3. Based on symm...
متن کاملTuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film.
In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and R...
متن کاملCorrigendum: Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe
In Fig. 2a and d of this Article, a uniform background subtraction was applied to the ARPES low-energy electronic structure measurements. In Fig. 2d, this background subtraction unintentionally was only applied to the central part of the figure. This affected the noise in the background but not the meaningful signal data features discussed in the paper, and therefore does not affect any conclus...
متن کاملStrain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2.
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed to the previously reported hexagonal 4a×4a structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2013
ISSN: 1367-2630
DOI: 10.1088/1367-2630/15/7/073008